PART |
Description |
Maker |
CY7C1383B-117AC CY7C1383B-117BZC CY7C1383B-117BGC |
512 × 36/1M × 18 Flow-Thru SRAM
|
Cypress Semiconductor
|
CY7C1381D-133AXI CY7C1381D-100AXC CY7C1381D-100BZI |
18 Mbit (512 K ? 36/1 M ? 18) Flow Through SRAM 18 Mbit (512 K × 36/1 M × 18) Flow Through SRAM
|
Cypress Semiconductor
|
CY7C1381B-83AC |
512 36/1M 18 Flow-Thru SRAM 512K X 36 STANDARD SRAM, 10 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位(512 KB的16)SmartVoltage闪存 RES CURRENT SENSE .025 OHM 1W 1% 8 M位(512 KB的16)SmartVoltage闪存 8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位(512 KB的16)SmartVoltage闪存
|
http:// Sharp, Corp. Sharp Corporation Sharp Electrionic Compo...
|
CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
IDT72V70800 IDT72V70800TF IDT72V70800PF |
512 x 512 Time Slot Interchange Digital Switch, 3.3V TSI-TDM Switches 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
15985 15985-8 |
HTSNK, B X-FLOW. .911 LOW FLOW. THREADED HTSNK,B型X流0.911低流量。螺 HTSNK B X-FLOW. .911 LOW FLOW. THREADED
|
Vicor, Corp. VICOR[Vicor Corporation]
|
IDT72V70200PFGBLANK IDT72V7020008 IDT72V70200PFBLA |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
Integrated Device Technology
|
S7171-0909-01 |
512 × 512 pixels, back-thinned FFT-CCD
|
Hamamatsu Corporation
|
IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
|
IDT[Integrated Device Technology]
|
GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit) R1LP0408C-I Series Datasheet 78K/AUG.01.03 Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit) Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit) Memory>Low Power SRAM
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor] Renesas
|